دیتاشیت MMBTH10-4LT1G
مشخصات دیتاشیت
نام دیتاشیت | NSV,S,MMBTH10L(4L) |
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حجم فایل | 93.488 کیلوبایت |
نوع فایل | |
تعداد صفحات | 5 |
دانلود دیتاشیت NSV,S,MMBTH10L(4L) |
NSV,S,MMBTH10L(4L) Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Base Part Number: MMBTH10
- detail: RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)