دیتاشیت MMBTH10-4LT1G
مشخصات دیتاشیت
| نام دیتاشیت | NSV,S,MMBTH10L(4L) |
|---|---|
| حجم فایل | 93.488 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت NSV,S,MMBTH10L(4L) |
NSV,S,MMBTH10L(4L) Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MMBTH10-4LT1G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): -
- Power Dissipation (Pd): 225mW
- Transition Frequency (fT): 800MHz
- DC Current Gain (hFE@Ic,Vce): 120@4mA,10V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@4A,400mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Base Part Number: MMBTH10
- detail: RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)
